Rectifying semi-conductor contacts. by Heinz K. Henisch

Cover of: Rectifying semi-conductor contacts. | Heinz K. Henisch

Published by Clarendon Press in Oxford .

Written in English

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Subjects:

  • Electric current rectifiers,
  • Semiconductors

Edition Notes

Bibliography: p. [352]-367.

Book details

SeriesThe International series of monographs on physics
The Physical Object
Paginationxii, 372 p. illus. ;
Number of Pages372
ID Numbers
Open LibraryOL18836949M

Download Rectifying semi-conductor contacts.

Rectifying semiconductor contacts: H.K. Henisch. Clarendon Press, Oxford, pp., 70s. Rectifying semi-conductor contacts — First published in Subjects Electric contacts, Electric current rectifiers, Semiconductors, German literature, History and criticism, Creation (Literary, Cited by: Rectifying semi-conductor contacts.

Oxford, Clarendon Press, (OCoLC) Rectifying semi-conductor contacts. book version: Henisch, Heinz K. Rectifying semi-conductor contacts. Oxford, Clarendon Press, (OCoLC) Document Type: Book: All Authors / Contributors: Heinz K Henisch. In a very readable style, this book presents what is currently known about the electrical properties of semiconductor contacts by relating concepts to the means of testing them.

It bridges the gap between the high-level abstractions of the modern theory of solids and phenomenological treatments widely employed in device physics.5/5(1). The distinction between contacts on "lifetime" and "relaxation" semiconductors is carefully developed.

Comprehenive and up-to-date, this volume replaces the author's highly successful Rectifying Semiconductor Contacts (Oxford, ). It is the best specialized book on semiconductor contacts currently available.

Read more Read less5/5(1). The latter ones stood almost at the very beginning of semi­ conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time.

The most commonly used rectifying contact is the Schottky barrier diode (SBD). Because of its fast response to signals, the SBD has found several applications in analog circuits where switching speed is important. A contact is said to be ohmic, i.e., non-rectifying, if it exhibits negligible resistance to current in both voltage polarities.

Most semiconductor devices are interconnected on the chip and brought to. A contact between metal and silicon can be rectifying or ohmic. The most commonly used rectifying contact is the Schottky barrier diode (SBD). A contact is said to be ohmic, i.e., non-rectifying. Rectifying Contacts When Ф M contact is called rectifying Ф M Semiconductor N-type V • A rectifying contact is one in which a forward bias drives a large current but a reverse bias results in a small current.

• Despite efforts, contacts are not ideal. • In Si, exposure to air causes SiO. With different characteristics of the metal-semiconductor interface, two types of MS contact will be formed: the rectifying Schottky barrier contact and the Ohmic contact.

Schottky Barrier Contact The Schottky barrier contact refers to the MS contact having a large potential barrier height formed when the Fermi energy of the metal and the. A contact between metal and silicon can be rectifying or ohmic. The most commonly used rectifying contact is the Schottky barrier diode (SBD).

A contact is said to be ohmic, i.e., non-rectifying, if it exhibits negligible resistance to current in both voltage polarities. Most semiconductor devices are interconnected on the chip and brought to the “outside world” by means of ohmic contacts and metal.

the semiconductor (Fig. 3c). Contact Resistance and Specific Contact Resistivity (ρc) Contact resistance is a measure of the ease with which current can flow across a metal-semiconductor interface. In an ohmic interface, the total current density J entering the interface is a function of the difference in the equilibrium Fermi levels on the.

This second edition brings a greatly expanded treatment of the physics of Schottky-barrier formation to its comprehensive discussion of modern semiconductor technology. Topics covered include the current/voltage relationship, the capacitance of rectifying contacts, and practical methods of fabricating contacts/5(3).

An illustration of an open book. Books. An illustration of two cells of a film strip. Video. An illustration of an audio speaker. Audio. An illustration of a " floppy disk. Software An illustration of two photographs.

Rectifying semi-conductor contacts Item Preview remove-circle. The rectifying properties of metal-semiconductor contacts were first described by Braun in A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time.

A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in Metal-semiconductor contacts are an obvious component of any semiconductor device. At the same time, such contacts cannot be assumed to have a resistance as low as that of two connected metals.

In particular, a large mismatch between the Fermi energy of the metal and semiconductor can result is a high-resistance rectifying contact. The characteristics of contacts between metals and semiconductors are discussed on their energy band diagrams. Depending upon the relative magnitudes of their work functions, ideally the contact can either be rectifying (Schottky barrier) or ohmic.

Rectifying Semi-Conductor Contacts Author is H. Henisch Hardcover R Publisher: Oxford at the Clarendon Press, London, Used - Very Good. Ex lib. No Jacket. Hard Cover. pgs. Diagrams. adshelp[at] The ADS is operated by the Smithsonian Astrophysical Observatory under NASA Cooperative Agreement NNX16AC86A.

Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well.

Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful. The three-dimensional contact system has no restriction in the topology. Both metal potential vm and semiconductor potential v are functions of the spatial coordinate x, y, z.

In the heavily doped semiconductor region normally used in VLSI contacts, the following approximations can be made: (1) The effect of minority carriers is neglected. - Buy Semiconductor Contacts: An Approach to Ideas and Models (International Series of Monographs on Physics) book online at best prices in India on Read Semiconductor Contacts: An Approach to Ideas and Models (International Series of Monographs on Physics) book reviews & author details and more at Free delivery on qualified s: 1.

SMA - Compound Semiconductors Lecture 2 - Metal-Semiconductor Junctions - Outline • Introduction Structure - What are we talking about.

Behaviors: Ohmic, rectifying, neither • Band picture in thermal equilibrium (Establishing the baseline) Ideal junction - no surface states Real junctions - surface states and Fermi level pinning • Applying voltage bias (i-v and c-v) (Where it gets. In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material.

It is the oldest practical semiconductor device.M–S junctions can either be rectifying or rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while.

The rectifying contact between Pd metal and the semiconductor (exemplified with g-C 3 N 4 here) could spontaneously initiate the electron redistribution at their interface, which can be further enhanced by the visible light irradiation due to the interfacial Schottky barrier.

The enhanced electric field at the Pd-support interface could. An ohmic contact is a non-rectifying electrical junction: a junction between two conductors that has a linear current–voltage (I-V) curve as with Ohm's resistance ohmic contacts are used to allow charge to flow easily in both directions between the two conductors, without blocking due to rectification or excess power dissipation due to voltage thresholds.

Transistors covers the main thread of transistor development. This book is organized into 2 parts encompass and starts with an overview of the semi-conductor physics pertinent to the understanding of transistors, as well as features and applications of the point contact devices and junction devices.

For more than three decades, SiC has been investigated as a wide band gap semiconductor. This paper reviews ohmic and rectifying metal contacts on n- and p-type α- and β-SiC reported throughout. The contact may be rectifying, which only allows current to pass in one direction.

Alternatively, it could be ohmic, in which case current can pass in either direction. Here we will discuss the rectifying contact, sometimes called the Schottky barrier contact.

The schematic below shows a metal and an n-type semiconductor. Rectifying Contacts Tunneling Current Minority-Carrier Injection MIS Tunnel Diode Measurement of Barrier Height Activation-Energy Measurement Photoelectric Measurement Ohmic Contacts Each topic is complete with diagrams, equations and other forms of graphical representations for better learning and quick understanding.

TY - CHAP. T1 - Ohmic Contacts to GaN. AU - Hartlieb, Philip J. AU - Davis, Robert F. AU - Nemanich, Robert. PY - /6/7.

Y1 - /6/7. N2 - The Schottky-Mott, Bardeen, and metal-induced gap state models of the formation of the Schottky barrier at a metal-semiconductor contact interface and the relative importance of each model to ohmic contact behavior on GaN are described.

This course can also be taken for academic credit as ECEApart of CU Boulder’s Master of Science in Electrical Engineering degree. This course presents in-depth discussion and analysis of pn junction and metal-semiconductor contacts including equilibrium behavior, current and capacitance responses under bias, breakdown, non-rectifying behavior, and surface effect.

Term (Index): Definition: rectifying contact: metal-semiconductor contact displaying asymmetric current-voltage characteristics, i.e. allowing high current to flow across under the forward bias condition and blocking current off under the reverse bias; this behavior is controlled by the bias voltage dependent changes of the potential barrier height in the contact region.

solid-state rectifiers annealing diamond electrical contacts electron beam deposition elemental semiconductors rectification semiconductor diodes semiconductor junctions semiconductor materials semiconductor-metal boundaries silicon compounds O plasma heterostructure rectifying contacts fabrication optically transparent SiC contact.

USA USA USA USA US A US A US A US A US A US A US A US A US A US A US A US A Authority US United States Prior art keywords wafer semi region surface electrode Prior art date Legal status (The legal status is an assumption and is not a legal. The Ohmic contact is a low resistance junction (non-rectifying) provides current conduction from metal to semiconductor and vice versa.

Theoretically speaking the current should increase/ decrease linearly with the applied voltage. With an immediate response for the any small voltage. There are two types of the Ohmic contacts. 정리하면 Rectifying contact은 diode같이 정류가 되는 IV 특성을 가진 것을 의미한다. 이제 ohmic contact에 대해 알아보자. Ohmic Contacts. Ohmic contact은 무엇이라고 했는가.

Ohm의 법칙을 따르는 것을 의미한다. Ohmic하면 딱 IV 그래프가 머리에 떠올라야 한다. A review is given of our present knowledge of metal-semiconductor contacts. Topics covered include the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance.

A short discussion is also given of practical contacts and their application in semiconductor technology, and a comparison is made with p-n junctions. relationship, the capacitance of rectifying contacts, and practical methods of fabricating contacts.

Written for having difficulties in bringing the imprinted book maybe the form of Metal-semiconductor Contacts (Electrical & Electronic Engineering Monographs) in e-book can be your substitute. Just the Basics. Linguistics, Style and Writing in the 21st Century - with Steven Pinker - Duration: The Royal Institution Recommended for you.

1 Prof. E. Pop and J. Plummer Stanford EE Lecture Metal-Semiconductor Contacts • Ohmic contacts • Rectifying contacts • Majority-carrier devices, unlike PN junctions • “Realistic” contacts and practical aspects • Read: MKC Chapter 3 (no Mott barrier).

CCH Chapter Sketch the energy-band diagram of a zero-biased rectifying metal-to-n-type semiconductor contact. Define the Schottky barrier and built-in potential barrier. Step-by-step solution.A Ohmic contact is a junction between two (semi)conductors that obeys Ohm's law, i.e.

its current is proportional to the applied voltage. A rectifying contact instead creates a rectifier, i.e. a two terminal component where current is not proportional to applied voltage.

In a rectifier current can be any value if applied voltage is above zero.

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